JEOL JBX 9300FS Electron Beam Lithography System
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The system has a specified resolution of 20 nm at 100 pA beam current.
Its capable of patterning a wide range of substrate sizes and can align to
pre-existing patterns.

Key Features:
  •   4 nm diameter Gaussian spot electron beam
  •   50 kV/100 kV accelerating voltage
  •   50 pA –100 nA current range
  •   50M Hz scan speed
  •   +/-100 um vertical range automatic focus
  •   +/-2 mm vertical range manual focus
  •   ZrO/W thermal field emission source
  •   vector scan for beam deflection
  •   max 300 mm (12") wafers with 9" of writing area
  •   230 mm x 230 mm writing area
  •   < 20 nm line width writing at 100 kV
  •   < 20 nm field stitching accuracy at 100 kV
  •   < 25 nm overlay accuracy at 100 kV
  •   20 bit Main Deflection DAC
  •   1 nm address grid
  •   500 um Maximum field size @ 100 kV, 1000 um @ 50 kV
  •   Integrated height mapping system
  •   3 mm x 5 mm minimum piece part exposure capability

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